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Enhancement of photon absorbtion on BaxSr1-xTiO3 thin films semiconductor using photonic crystals.

dc.contributor.advisorAlatas, Husin
dc.contributor.advisorIrzaman
dc.contributor.authorNuayi, Abd. Wahidin
dc.date.accessioned2013-10-28T03:37:46Z
dc.date.available2013-10-28T03:37:46Z
dc.date.issued2013
dc.identifier.urihttp://repository.ipb.ac.id/handle/123456789/65723
dc.description.abstractIn this research, has been conducted BaxSr1-xTiO3 (BST) thin films manufacturing for mole fraction x = 0.25, 0.35, 0.45, and 0.55; and concentration of 1 molar using chemical solution depositon (CSD) method. The materials, which are used in this research, are barium acetate [Ba(CH3COO)2, 99%], strontium acetate [Sr(CH3COO)2, 99%], titanium isopropoxide [Ti(C12O4H28), 97.999%], gallium trioxide [Ga2O3], 2-methoxyethanol [H3COOCH2CH2OH, 99%] and 1 x 1 cm of transparent conductive oxide (TCO) glass as substrate. Two BST thin films are made that for BST thin films which are doped by 10% galium (BGST) as p-type layer and pure BST solution as n-type. BST solution is made by reacting barium acetate [Ba(CH3COO)2, 99%], strontium acetate [Sr(CH3COO)2, 99%] and titanium isopropoxide [Ti(C12O4H28)] into 2-methoxyethanol solvent [H3COOCH2CH2OH, 99%] in accordance with mass gram for each x value. While, BGST solution is made in the same way as BST solution, plus adding gallium at 10% of the mass of BST. Once all materials are reacted, then vibrated using ultrasonic for 90 minutes, and followed by coating BGST / BST on the TCO substrate. Once the layer is formed, then annealed for 15 hours at temperature of 500 °C with increasing rate of 1.67 oC/minute. Characterizations of BST thin films with or without photonic crystals include the absorbance and transmittance in the visible light spectrum, as well as the electrical photoconductivity characterizations. From BST thin films without photonic crystals indicate that our thin films have light absorption area on almost the entire range of the visible light spectrum even to the infrared range with absorption value over than 67.6%, in addition, it can be seen that the maximum absorbance of BST thin films for all mole fractions lie in blue to green light spectrum region, 457 nm ≤ λ ≤ 570 nm and the minimum in yellow to red light spectrum region, 570 nm ≤ λ ≤ 678 nm. The largest absorbance is found at x = 0.25 with average absorbance value of 92.04% and maximum and minimum absorbance peaks at wavelength of 500.89 and 657.72 nm, respectively. At x = 0.35, average absorbance value decreased to 83.55% with maximum and minimum peaks at 505.73 and 613.68 nm, respectively. Then increased to 91.16% at x = 0.45 with maximum and minimum peaks at 506.04 and 618.56 nm, respectively. At x = 0.55, average absorbance value decreased to 80.12% with maximum and minimum peaks at 507.85 and 608.79 nm, respectively. Moreover, it can be seen that the addition of barium mole fraction leads to wider maximum absorbance or minimum transmittance peaks and narrower minimum absorbance or maximum transmittance peaks in the same range of the green and blue & red light spectrums, respectively. BST thin films with photonic crystals show increasing in absorption for all x values in the range of 3.04 into 13.33%. At x = 0.25, average absorbance percentage increased 3.96% from 92.4 into 95.68%, for x = 0.35 average percentage increased 7.07% into 89.45 from 83.55%. Furthermore, average absorbance of BST thin films at x = 0.45 increased 3.04% from 91.16 into 93.93% and x = 0.55 has the highest average absorbance percentage that is 13.33% from 80.13 into 90.81%. Characterizations which are performed at frequency of 100 kHz show that the larger barium mole fraction leads to the higher electrical conductivity of BST films, non-linear, and when it is subjected to the light, its electrical conductivity is decrease. This phenomenon shows that our BST thin films have photoconductivity property. In this research, electrical conductivity of BST thin films in the range of 0.22 x 10-1 into 0.57 x 10-1 S/cm. From several literatures, that of semiconductor materials in the range of 10-8 int0 103 S/cm, based on this, our BST thin films can be classified as semiconductor materials. By considering solar cell material ability in absorbing photons, we conclude that our BST material can be utilized as a solar cell material, however, further testing on other solar cell properties is required.en
dc.subjectAbsorbanceen
dc.subjectCSDen
dc.subjectphotonic crystalsen
dc.subjectsemiconductoren
dc.subjectthin filmen
dc.titlePeningkatan absorbsi foton pada film tipis semikonduktor BaxSr1-xTiO3 dengan menggunakan kristal fotoniken
dc.titleEnhancement of photon absorbtion on BaxSr1-xTiO3 thin films semiconductor using photonic crystals.


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