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dc.contributor.advisorIrzaman
dc.contributor.advisorSetiawan, Ardian Arif
dc.contributor.authorSARMILAH
dc.date.accessioned2026-08-06T05:56:44Z
dc.date.available2026-08-06T05:56:44Z
dc.date.issued2026
dc.identifier.urihttp://repository.ipb.ac.id/handle/123456789/177387
dc.description.abstractPenelitian ini mengkaji pengaruh pendadah Cu terhadap sifat optik, kristal, dan listrik film tipis Ba0,875Sr0,125TiO3 didadah Cu dengan variasi konsentrasi 0%; 0,5%; 1%; dan 1,5% sebagai sensor cahaya berbasis struktur Metal-Ferroelectric-Semiconductor (MFS) dengan substrat Silikon (100) tipe-p. Film disintesis menggunakan metode Chemical Solution Deposition (CSD) dan Spin Coating. Ketebalan film menurun seiring peningkatan doping. Karakterisasi UV-Vis menunjukkan penurunan energi band gap. XRD menunjukkan perubahan parameter kisi, penurunan momen dipol, dan peningkatan polarisasi spontan. Uji sifat listrik menunjukkan bahwa konduktivitas listrik meningkat. Uji respon sensor cahaya menunjukkan bahwa film tipis pada keseluruhan konsentrasi memberikan respon tegangan terhadap cahaya. Temuan ini memperkuat material berstruktur MFS yang didadah Cu sebagai kandidat unggul untuk aplikasi sensor cahaya.
dc.description.abstractThis study examines the effect of Cu doping on the optical, crystal, and electrical properties of Ba0.875Sr0.125TiO3 doped with Cu with varying concentrations of 0%; 0.5%; 1%; and 1.5% as a light sensor based on Metal-Ferroelectric-Semiconductor (MFS) structure with thin-p Silicon (100) substrate. The film was synthesized using Chemical Solution Deposition (CSD) and Spin Coating methods. The film thickness decreased with increasing doping. UV-Vis characterization showed a decrease in the band gap energy. XRD showed changes in lattice parameters, a decrease in dipole moment, and an increase in spontaneous polarization. Electrical properties showed an increase in electrical conductivity. Light sensor response tests showed that thin films at all concentrations exhibited a voltage response to light. These findings confirm that Cu-doped MFS-structured materials are superior candidates for light sensor applications.
dc.description.sponsorship
dc.language.isoid
dc.publisherIPB Universityid
dc.titleSensor Cahaya Berstruktur Metal-Ferroelectric-Semiconductor (MFS) Berbasis Film Tipis Ferroelektrik Ba0,875Sr0,125TiO3 didadah Cu (0%; 0,5%; 1%; dan 1,5%) / Metal-Ferroelectric-Semiconductor (MFS) Structured Light Sensor Based on Ferroelectric Thin Film Ba0.875Sr0.125TiO3 Doped with Cu (0%; 0.5%; 1%; and 1.5%)id
dc.title.alternative
dc.typeSkripsi
dc.subject.keywordBSTid
dc.subject.keywordpendadah Cuid
dc.subject.keywordfilm tipisid
dc.subject.keywordsensor cahayaid
dc.subject.keywordBSTid
dc.subject.keywordCu dopingid
dc.subject.keywordThin filmid
dc.subject.keywordlight sensorid
dc.subtypeUndergraduate Theses


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