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      Film Tipis Ba0,625Sr0,375TiO3 Didadah Fe Berstruktur Metal–Ferroelectric–Semiconductor (MFS) sebagai Sensor Cahaya

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      Date
      2026
      Author
      HARIANJA, AYU BONITA PERTIWI
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      Abstract
      Film tipis Barium Strontium Titanate (BST) merupakan material feroelektrik semikonduktor yang berpotensi sebagai sensor cahaya. Penelitian ini bertujuan menganalisis pengaruh variasi pendadah Fe terhadap ketebalan, sifat optik, struktur kristal, karakteristik listrik film tipis yang dihasilkan, serta mengkaji respons listrik film tipis Ba0,625Sr0,375TiO3 terhadap cahaya sebagai sensor cahaya. Film tipis Ba0,625Sr0,375TiO3 yang didadah Fe (0%, 0,5%, 1%, dan 1,5%) telah berhasil dibuat di atas substrat Si (100) tipe-p melalui proses Chemical Solution Deposition (CSD) yang dilanjutkan dengan proses spin coating sebanyak 3 kali pengulangan pada kecepatan 3000 rpm selama 30 detik dan di annealing pada temperatur 550 °C. Hasil pengukuran menunjukkan bahwa penambahan pendadah Fe meningkatkan ketebalan film, mengubah energi band gap serta menghasilkan film BST berstruktur kubik dengan karakteristik diode dan respons terhadap cahaya. Variasi pendadah Fe 1% memberikan respons terbaik, sehingga film tipis BST berpotensi digunakan sebagai sensor cahaya berbasis respons fotokonduktif.
       
      Barium Strontium Titanate (BST) thin films are ferroelectric semiconductor materials with potential applications as light sensors. This study aims to analyze the effect of Fe doping variation on the thickness, optical properties, crystal structure, and electrical characteristics of the resulting thin films, as well as to investigate the electrical response of Ba0.625Sr0.375TiO3 thin films to light as light sensors. Fe-doped Ba0.625Sr0.375TiO3 thin films with Fe concentrations of (0%, 0,5%, 1%, and 1,5%) were successfully fabricated on p-type Si (100) substrates using the Chemical Solution Deposition (CSD) method followed by a spin coating process repeated three times at a rotation speed of 3000 rpm for 30 seconds and annealed at 550 °C. The results showed that Fe doping increased the film thickness, altered the band gap energy, and produced BST thin films with cubic structures, diode characteristics, and light response properties. The 1% Fe dopant concentration yielded the best response, indicating that BST thin films have the potential to be used as photoconductive light sensors.
       
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      http://repository.ipb.ac.id/handle/123456789/174902
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      Copyright © 2020 Library of IPB University
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      Indonesia DSpace Group 
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