Sensor Cahaya Berstruktur Metal-Ferroelectric-Semiconductor (MFS) Berbasis Film Tipis Ferroelektrik Ba0,75Sr0,25TiO3 Didadah Ru (0%; 0,5%; 1%; 1,5%)

Abstract

Penelitian ini bertujuan menganalisis pengaruh pendadah rutenium (Ru) terhadap karakteristik film tipis ferroelektrik Ba0,75Sr0,25TiO3 (BST) berstruktur Metal–Ferroelectric–Semiconductor (MFS) sebagai sensor cahaya. Film tipis BST:Ru dengan variasi Ru 0%; 0,5%; 1%; dan 1,5% disintesis pada substrat Si (100) tipe-p menggunakan metode Chemical Solution Deposition (CSD). Karakterisasi dilakukan melalui pengujian ketebalan, sifat optik, sifat kristal, respons cahaya, dan sifat listrik. Hasil penelitian menunjukkan bahwa peningkatan konsentrasi Ru menurunkan energi celah pita, menyebabkan kontraksi kisi kristal, serta meningkatkan respons listrik terhadap cahaya. Pada kondisi terang, arus dan arus saturasi meningkat, sedangkan potensial penghalang menurun dibandingkan kondisi gelap. Sampel dengan pendadah Ru 1% menunjukkan karakteristik listrik terbaik. Hasil penelitian menunjukkan bahwa film tipis BST:Ru berpotensi dikembangkan sebagai material sensor cahaya jenis fotodioda berskala nano.

This study aimed to analyze the effect of ruthenium (Ru) doping on the characteristics of Ba0.75Sr0.25TiO3 (BST) ferroelectric thin films with a Metal–Ferroelectric–Semiconductor (MFS) structure as light sensors. BST:Ru thin films with Ru variations of 0%, 0.5%, 1%, and 1.5% were synthesized on p-type Si (100) substrates using the Chemical Solution Deposition (CSD) method. Characterization was carried out through thickness, optical, crystal structure, light response, and electrical property measurements. The results showed that increasing Ru concentration reduced the band gap energy, caused crystal lattice contraction, and improved the electrical response to light. Under illuminated conditions, the current and saturation current increased, while the barrier potential decreased compared to dark conditions. The sample with 1% Ru doping showed the best electrical characteristics. The results indicate that BST:Ru thin films have the potential to be developed as nanoscale photodiode-type light sensor materials.