| dc.description.abstract | Pure Ba0,5Sr0,5TiO3 (BST) thin film, BST doped by niobium (BNST) and BST doped by
iron (BFST) have been synthesized on p-type Si (100) substrates using Chemical Solution
Deposition (CSD) methods followed by spin coating and annealing techniques. Current-voltage
characterizations on these sample result in agreement that all of the BST, BNST, and BFST thin
films have photodiode properties. Electrical conductivity values of BST, BNST, and BFST are in
the range of conductivity values of semiconductor materials. Niobium or iron doping on the BST
samples increase their conductivity value their dielectric constant. This conductivity values may
change when a light is exposed on the film surface. Absorbance and reflectance characterizations
show that the BST, BNST, and BFST thin films absorb certain range of visible and infrared light.
It is convincing that the BST, BNST, and BFST thin films might be used as photodiode light
sensor. | id |
