Analisis Arus Saturasi, Tegangan Penghalang, dan Mobilitas Elektron Film Tipis Barium Titanat Didadah Ferium

Abstract

Perkembangan teknologi khususnya elektronika gencar dilakukan untuk menciptakan inovasi devais berukuran kecil dengan performa yang maksimal, seperti film tipis. Film tipis Barium Titanat (BaTiO3) didadah Ferium dengan variasi konsentrasi pendadah (0%; 0,5%; dan 1%) berhasil dibuat. Larutan sampel disaring menggunakan filter PVDF kemudian dideposisi menggunakan metode chemical solution deposition (CSD) di atas substrat silikon tipe-p (100) dengan teknik spin coating pada kecepatan putar 3000 rpm selama 60 detik. Proses annealing dilakukan pada suhu 850°C dan ditahan selama 8 jam. Berdasarkan pengujian I-V meter, film tipis memiliki karakteristik dioda dan responsif terhadap perubahan intensitas iradiasi cahaya. Peningkatan intensitas iradiasi cahaya menyebabkan nilai arus saturasi meningkat namun nilai potensial penghalang menurun. Mobilitas elektron Barium Titanat pada konsentrasi pendadah Ferium 0%, 0,5%, dan 1% didapatkan berturut-turut 2,02×10-6cm2/Vs, 3,16×10-6cm2/Vs, dan 3,03×10-6cm2/Vs. Hasil sifat listrik ini menunjukkan bahwa film tipis BaTiO3 didadah Fe berpotensi sebagai sensor cahaya.

The development of technology, especially in electronics, is actively pursued to create innovative devices that are small in size yet deliver maximum performance, such as thin films. Ferium-doped Barium Titanate (BaTiO3) thin films with varying dopant concentrations (0%, 0,5%, and 1%) have been successfully fabricated. The sample solution was filtered using a PVDF filter and then deposited on p-type silicon (100) substrates using the chemical solution deposition (CSD) method with spin coating technique at a spin speed of 3000 rpm for 60 seconds. The annealing process was performed at a temperature of 850°C and held for 8 hours. Based on I-V meter testing, the thin films exhibited diode characteristics and were responsive to changes in light irradiation intensity. Increasing the intensity of light irradiation resulted in an increase in saturation current while the barrier potential decreased. The electron mobility of Barium Titanate with Ferium dopant concentrations of 0%, 0,5%, and 1% were found to be 2,02×10-6cm2/Vs, 3,16×10-6 cm2/Vs, and 3,03×10-6cm2/Vs, respectively. These electrical properties indicate that Fe-doped BaTiO3 thin films have the potential to be used as light sensors.