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dc.contributor.advisorIrzaman
dc.contributor.advisorSetiawan, Ardian Arif
dc.contributor.authorFazira, Nurul
dc.date.accessioned2021-07-08T00:55:58Z
dc.date.available2021-07-08T00:55:58Z
dc.date.issued2021
dc.identifier.urihttp://repository.ipb.ac.id/handle/123456789/107282
dc.description.abstractFilm BiFeO3 dengan beberapa persentase pendadah cerium oksida (0%, 2%, 4%, 6%) dengan menggunakan metode chemical solution deposition (CSD). Selain itu, menggunakan teknik spin coating dengan kecepatan putar 8000 rpm telah berhasil dibuat diatas subtrat silikon tipe-p 100. Suhu yang digunakan pada saat proses anealing sebesar 850 oC dan ditahan selama 8 jam dengan kelajuan suhu sebesar 1,67 OC/menit, lalu mengikuti proses pendinginan hingga suhu kamar selama 13 jam. Film BiFeO3 yang didadah dengan pendadah cerium oksida (0%, 2%, 4%, 6%) memiliki nilai energi bandgap secara langsung sebesar 2,7650 eV; 2,7073 eV; 2,6556 eV; dan 2,6303 eV. Nilai energi bandgap secara tidak langsung sebesar 2,5151 eV; 2,4874 eV; 2,4664 eV; dan 2,4539 eV. Hasil parameter kisi a dan c yang didapatkan pada karakterisasi XRD sebesar 5,5829 Å; 5,6470 Å; 5,6883 Å; 5,7041 Å dan 14,2152 Å, 14,3222 Å; 14,3839 Å; 14,9271 Å dengan struktur kristal berbentuk heksagonal. Hasil analisis menggunakan perangkat lunak MAUD sebagai data pembanding mendapatkan parameter kisi a dan c sebesar 5,6986 Å, 5,5746 Å; 6,0561 Å; 7,1561 Å dan 13,0074 Å; 13,9398 Å; 13,8179 Å; 14,0931 Å. Analisis hasil menggunakan perangkat lunak MAUD dapat diperoleh visualisasi struktur kristal heksagonal pada film BiFeO3. Kata kunci: BiFeO3, cerium oksida, CSD, energi bandgap, heksagonal.id
dc.description.abstractBiFeO3 film with some percentage of ferium concentration (0%, 2%, 4%, 6%) using the CSD method. In addition, using the spin coating technique with a rotational speed of 8000 rpm has been successfully made above 100 p-type silicon substrate. The temperature used during the anealing process was 850 oC for 8 hours with a temperature speed of 1,67 OC/minute, then followed the cooling process to room temperature for 13 hours. The BiFeO3 film made with ferrium-doped variation concetration (0%, 2%, 4%, 6%) had a direct bandgap energy value of 2,7650 eV; 2,7073 eV; 2,6556 eV, and 2,6303 eV. The bandgap energy value indirect is 2,5151 eV; 2.4874 eV; 2.4664 eV; and 2.4539 eV. The results of the lattice parameters a and c obtained based on XRD characterization are 5,5829 Å; 5,6470 Å; 5,6883 Å; 5,7041 Å and 14,2152 Å, 14,3222 Å; 14,3839 Å; 14,9271 Å with possible hexagonal shape changes. The results of the analysis using the MAUD software as comparison data obtained lattice parameters a and c of 5.6986 , 5.5746 ; 6.0561 ; 7.1561 and 13.0074 ; 13.9398 ; 13.8179 ; 14.0931 . Analysis of the results using MAUD software can be obtained visualization of the hexagonal crystal structure on the BiFeO3 film. Keywords: BiFeO3, cerium oxide, CSD, bandgap energy, hexagones.id
dc.language.isoidid
dc.publisherIPB Universityid
dc.titlePembuatan Fim Tipis BiFeO3 didadah Cerium Oksida (CeO2)id
dc.typeUndergraduate Thesisid
dc.subject.keywordBiFeO3id
dc.subject.keywordCerium Oksidaid
dc.subject.keywordCSDid
dc.subject.keywordenergi bandgapid
dc.subject.keywordheksagonalid


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