Photosensor producing based on ferroelectric material of Ba0,5Sr0,5TiO3 doped by Ferrium Oxide (Fe2O3) on a P-Type Silicon Substate Si (100) applied as a digital camera with a single pixel image sensor

Abstract

Thin film Ba0,5Sr0,5TiO3 (BST) doped with Fe2O3 was grown on p-type silicon substrate (100) using chemical solution deposition (CSD). It used the solvent 2-methoxyethanol with annealing temperature of 850°C and the doping treatment Fe2O3 of 2.5, 5, 7.5, 10 % of the mass formed BST. Pure BST had the highest absorption of 600 nm of light wavelength. Additions Fe2O3 moves highest absorption in the range of 560 nm. Fe2O3 addition was strengthening thin film sensitivity to the effects of light. In general, doping Fe2O3 10% was result the best absorbance and current-voltage of BST thin film. Electrical properties of thin films BST include dielectric, photoconductivity, and dissipation energy. Based on the current-voltage (I-V) analysis, pure BST and doped BST showed photodiode properties. Dielectric values obtained in the range from 23.32 to 243. Based on electrical conductivity data and energy dissipation, BST thin films have shown photodiode characteristics and are therefore suitable as light sensors. The image sensor in a digital camera is also a light sensor. This BST thin film has been scientifically proven to be a light sensor and also it can be applied as an image sensor. This is a novelty image sensor based on thin film Ba0.5Sr0.5TiO3.