Please use this identifier to cite or link to this item: http://repository.ipb.ac.id/handle/123456789/72973
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dc.contributor.advisorIrzaman
dc.contributor.advisorSyafutra, Heriyanto
dc.contributor.authorAkbar, Hadyan
dc.date.accessioned2015-01-06T03:49:36Z
dc.date.available2015-01-06T03:49:36Z
dc.date.issued2014
dc.identifier.urihttp://repository.ipb.ac.id/handle/123456789/72973
dc.description.abstractBa0.55Sr0.45TiO3 films had been successfully deposited on the substrate of p-type Silicon (100) using Chemical Solution Deposition (CSD) and spin coating method with 3000 rpm rotation speed for 30 seconds and 1 M solubility. Thin film was annealed at temperature of 750 oC, 775 oC, 825 oC, 875 oC and 925 oC for 15 hours with rate of temperature rise 1.67 oC/minute. Optical test results showed the BST films can absorb visible light, so it can be used for non-invasive blood sugar level sensors. Analysis of the band gap energy performed using the Tauc Plot method results with the range of 2.843-3.169 eV. Electrical test results demonstrated the BST films are diodes. SEM results of BST films showed a non-homogeneous surface morphology. EDX results showed that the composition of the BST constituent is not fully in accordance with stoichiometry.en
dc.language.isoid
dc.subject.ddcElectrical propertiesen
dc.subject.ddcPhysicsen
dc.titleKarakterisasi Optik dan Listrik Film Ba0.55Sr0.45TiO3 untuk Aplikasi Sensor Kadar Gula Darahen
dc.subject.keywordBogor Agricultural University (IPB)en
dc.subject.keywordblood sugar level sensoren
dc.subject.keywordoptical propertiesen
dc.subject.keywordelectrical propertiesen
dc.subject.keywordEDXen
dc.subject.keywordBSTen
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