Calculation of Opticals and Electronics Parameter of Barium Strontium Titanate Film

Abstract

Barium Strontium Titanate Film that known as BST is semiconductor material that can show ferroelectric, paraelectric or pyroelectric characteristic depend on fabrication process. The aim of this study is to calculate optics and electronics parameter of Barium Strontium Titanate (BST). BST films that were grown at silicon were characterized using spectrometer and sourcemeter. In this study it had found that bandgap energy were 3.22 eV, 3.19 eV, 3.20 eV and 3.18 eV for mole fraction of Ba 0.25, 0.35, 0.45 and 0.55, respectively. Then refractive index at 500 nm – 600 nm wavelength for mole fraction of Ba 0.25, 0.35, 0.45 and 0.55 respectively were 2.69 – 3.44, 1.87 – 1.99, 2.05 – 2.25, and 1.76 – 1.77. Furthermore extinction coefficients at 500 nm – 600 nm wavelength were 3.21 x 105 – 4.5 x 105, 4.67 x 105 – 6.07 x 105, 4.19 x 105 – 5.59 x 105 and 4.37 x 105 – 5.20 x 105 respectively for mole fraction of Ba 0.25, 0.35, 0.45 and 0.55. The increasing of Ba mole fraction has influenced to decreasing of bandgap energy and refractive index but it has increased extinction coefficient. Electronics parameter as series resitance had found 31.1551 kΩ, 50.8867 kΩ, 22.54915 kΩ and 13.2372 kΩ for mole fraction of Ba 0.25, 0.35, 0.45 and 0.55, respectively. Then ideality factor for mole fraction of Ba 0.25, 0.35, 0.45 and 0.55 respectively were 1.01, 1.00, 1.00 and 1.00. Furthermore saturation current for mole fraction of Ba 0.25, 0.35, 0.45 and 0.55 respectively were 1.88 μA, 1.18 μA, 6.10 μA and 6.10 μA. The last, heigh barrier potential for mole fraction of Ba 0.25, 0.35, 0.45 and 0.55 were 0.42 eV, 0.43 eV, 0.38 eV dan 0.38 eV, respectively. The increasing of Ba mole fraction tend to decrease height barrier potential, increase saturation current and decrease series resistance.