Enhancement of Photon Absorption on Ba𝑥Sr1−𝑥TiO3 Thin-Film Semiconductor Using Photonic Crystal

Abstract

Enhancement of photon absorption on barium strontiumtitanate (Ba𝑥Sr1−𝑥TiO3) thin-film semiconductor for mole fraction 𝑥 = 0.25, 0.35, 0.45, and 0.55 using one-dimensional photonic crystal with defect was investigated experimentally. The thin film was grown on transparent conductive oxide (TCO) substrate using chemical solution deposition method and annealed at 500∘C for 15 hours with increasing rate of 1.6∘C/min. From optical characterization in visible spectrum it was found that the average absorption percentages are 92.04%, 83.55%, 91.16%, and 80.12%, respectively. The BST thin film with embedded photonic crystal exhibited a relatively significant enhancement on photon absorption, with increasing value of 3.96%, 7.07%, 3.04%, and 13.33%for the respective mole fraction and demonstrating absorbance characteristic