Characterizations Of Solar Cells Parameters Based On Ba0,5sr0,5TIO3 Ferroelectric Film

Abstract

Growth of films Ba0,5Sr0,5TiO3 (BST) 1 M has been done with variation of annealing in hold time 8 hours, 15 hours, 22 hours, and 29 hours at constant temperature 8500C, above Si (100) substrate p-type, by using the sol-gel process method which followed with spin coating process at 3000 rpm for 30 seconds. Optics spectroscopy shows that BST film solar cells with annealing hold time 8 hours, 15 hours, and 22 hours, works effectively in wavelength ≥ 700 nm absorption range. Yet for sample with annealing hold time about 29 hours effectively absorb in ≤ 700 nm wavelength range. It obtained BST film refractive index at range 2.0 to 7.0 to wavelength range ±370-870 nm. Band gap BST film value based on annealing hold time 8 hours, 15 hours, 22 hours, and 29 hours respectively 2.60 eV; 3.12 eV: 3.24 eV, and 2.66 eV. Electrical conductivity value which obtained, indicate that the BST film is classified as semiconductor material with conductivity order 10-5-10-4 S / cm. The result of I-V photovoltaic characterization shows the BST film potentially to be a solar cells device with efficiency according to the annealing hold time 8 hours, 15 hours, 22 hours, and 29 hours in a row are 2.68x10-5%, 3.51x10-5%, 4.53x10-5% and 3.22x10-5%