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DC Field | Value | Language |
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dc.contributor.advisor | Sumaryada, Tony Ibnu | |
dc.contributor.advisor | Syafutra, Heriyanto | |
dc.contributor.author | Sobirin, Robi | |
dc.date.accessioned | 2013-06-17T08:23:09Z | |
dc.date.available | 2013-06-17T08:23:09Z | |
dc.date.issued | 2013 | |
dc.identifier.uri | http://repository.ipb.ac.id/handle/123456789/64134 | |
dc.description.abstract | Solar cells are one source of renewable energy that harnesses sunlight for generating electricity. Increasing the efficiency of solar cells can be done by preparing a multiple layer of semiconductors with different energy gap, commonly referred to as multijunctions solar cells. Simulations were carried out in two different models. Model 1 is a simulation that generate different valuer of currents in each layer. while Model 2 is a simulation that generate the same value currents in each layer. In Model 1, those three layers of Al0.3Ga0.7As / InP / Ge produce 26.2 mA, 16.2 mA, and 11.0 mA of ISC current respectively. The total efficiency for this model is 38.86 %. As for simulation of Model 2 Isc current value is fixed for each layer is 11.9 mA. The total efficiency of Model 2 is obtained around 20.26 %. All simulations is performed using Solar Irradiance of 1367 W/m2 obtained from the calculation of the blackbody radiation spectrum, at 6000 K. | en |
dc.subject | Bogor Agricultural University (IPB) | en |
dc.subject | triple junction | en |
dc.subject | solar cells | en |
dc.subject | intensity | en |
dc.subject | efficiency | en |
dc.subject | current | en |
dc.title | Simulasi Perancangan Sel Surya Triple Junction Al0.3Ga0.7As / InP / Ge Menggunakan Program PC1D Dan Matlab | en |
Appears in Collections: | UT - Physics |
Files in This Item:
File | Size | Format | |
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G13rso.pdf Restricted Access | 1.25 MB | Adobe PDF | View/Open |
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