Analisis Arus Saturasi, Tegangan Penghalang, dan Mobilitas Elektron Film Tipis Stronsium Titanat Didadah Cuprum

Abstract

Film tipis Stronsium titanat didadah Cuprum telah berhasil dibuat dengan menggunakan metode Chemical Solution Deposition (CSD) dan Spin Coating. Dalam penelitian ini telah dibuat film tipis Stronsium titanat didadah Cuprum dengan variasi pendadah 0%, 0,5% dan 1%. Larutan sampel disaring menggunakan filter PVDF kemudian dideposisikan di atas substrat silikon tipe-p (100) dengan teknik spin coating pada kecepatan putar 3000 rpm selama 60 detik. Proses annealing dilakukan pada suhu 850°C dan ditahan selama 8 jam. Hasil pengujian ketebalan film menggunakan metode volumetrik menunjukkan film tipis semakin tebal seiring penambahan konsentrasi pendadah. Hasil uji sifat listrik dengan I-V meter menunjukkan film tipis responsif terhadap perubahan cahaya. Peningkatan intensitas iradiasi cahaya menyebabkan nilai arus saturasi meningkat namun nilai potensial penghalang menurun. Pengujian dengan space charge limited current (SCLC) menunjukkan mobilitas elektron pada film meningkat seiring penambahan konsentrasi pendadah. Pengujian electrochemical impedance spectroscopy (EIS) yang menunjukkan nilai impedansi film yang menurun memperkuat hasil dari pengujian SCLC.

Strontium titanate thin films on Cuprum have been successfully made using the Chemical Solution Deposition (CSD) and Spin Coating methods. In this research, a thin film of Strontium titanate was made on Cuprum with a variation of 0%, 0,5%, and 1%. The sample solution was filtered using a PVDF filter and then deposited on a p-type silicon substrate (100) using a spin coating technique at a rotation speed of 3000 rpm for 60 seconds. The annealing process was carried out at 850°C and held for 8 hours. The results of film thickness testing using the volumetric method show that the thin film gets thicker as the barrier concentration increases. The results of the electrical properties test with an I-V meter show that the thin film is responsive to changes in light. Increasing the intensity of light irradiation causes the saturation current value to increase but the barrier potential value decreases. Tests with space charge limited current (SCLC) show that electron mobility in the film increases as the barrier concentration increases. Electrochemical impedance spectroscopy (EIS) testing which shows a decreased film impedance value strengthens the results of the SCLC testing.