Please use this identifier to cite or link to this item: http://repository.ipb.ac.id/handle/123456789/107217
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dc.contributor.advisorZuhri, Mahfuddin-
dc.contributor.advisorIrzaman-
dc.contributor.authorMaesaroh, Mustika Nuraini-
dc.date.accessioned2021-07-02T00:26:19Z-
dc.date.available2021-07-02T00:26:19Z-
dc.date.issued2021-
dc.identifier.urihttp://repository.ipb.ac.id/handle/123456789/107217-
dc.description.abstractFilm LiNbO3 dengan beberapa persentase pendadah Ga2O3 (0%, 2%, 4%, 6%) berhasil dibuat menggunakan metode Chemical Solution Deposition (CSD). Selain itu, pembuatan film LiNbO3 menggunakan teknik spin coating dengan kecepatan putar 8000 rpm telah berhasil dibuat di atas substrat silikon (100) tipe-p. Suhu yang digunakan pada saat proses annealing sebesar 850oC dan ditahan selama 8 jam dengan kelajuan suhu sebesar 1,67oC/menit, lalu mengikuti proses pendinginan hingga suhu kamar selama 13 jam. Film LiNbO3 yang didadah Ga2O3 (0%,2%,4%,6%) menghasilkan energi bandgap berkisar antara 3,6554 eV sampai 3,7232 eV. Hasil parameter kisi a dan c yang didapatkan pada karakterisasi XRD sebesar 5,411Ǻ; 5,248Ǻ; 5,190Ǻ; 5,084Ǻ dan 14,745Ǻ; 14,348Ǻ; 14,069Ǻ; 13,464Ǻ. Hasil analisis menggunakan perangkat lunak MAUD dan data literatur mendapatkan parameter kisi a dan c sebesar 5,091Ǻ; 5,192Ǻ; 5,163Ǻ; 5,057Ǻ dan 14,274Ǻ; 14,204Ǻ; 13,880Ǻ; 13,487Ǻ. Analisis hasil menggunakan perangkat lunak MAUD dapat diperoleh visualisasi struktur kristal heksagonal pada film LiNbO3.id
dc.description.abstractLiNbO3 film with some percentage of Ga2O3 concentration (0%, 2%, 4%, 6%) has been successfully made using the CSD method. In addition, the manufacture of LiNbO3 films using the spin coating technique with a rotational speed of 8000 rpm has been successfully made above 100 p-type silicon substrate. The temperature used during the annealing process is 850C and holds for 8 hours with a temperature speed of 1.67C /minute, then follows the cooling process to room temperature for 13 hours. The LiNbO3 film doped Ga2O3 variation concentration (0%, 2%, 4%, 6%) had a bandgap energy value ranging from 3,6554 eV sampai 3,7232 eV. The results of the lattice parameters a and c obtained based on XRD characterization are 5,411Ǻ; 5,248Ǻ; 5,190Ǻ; 5,084Ǻ dan 14,745Ǻ; 14,348Ǻ; 14,069Ǻ; 13,464Ǻ. The results of the analysis using MAUD software and data literature get lattice parameters a and c of 5,091Ǻ; 5,192Ǻ; 5,163Ǻ; 5,057Ǻ and 14,274Ǻ; 14,204Ǻ; 13,880Ǻ; 13,487Ǻ. In addition the results of the analysis using MAUD software can know the crystal structure hexagonal visualization on the LiNbO3 film.id
dc.language.isoidid
dc.publisherIPB Universityid
dc.titleSintesis dan Karakterisasi Film Tipis Litium Niobat (LiNbO3) Didadah Galium Oksida (Ga2O3)id
dc.typeUndergraduate Thesisid
dc.subject.keywordChemical Solution Depositionid
dc.subject.keywordGa2O3id
dc.subject.keywordLiNbO3id
Appears in Collections:UT - Physics

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