Pembuatan Film Tipis Cu2ZnSnS4 sebagai Lapisan Penyerap Cahaya pada Sel Surya Menggunakan Metode Elektrodeposisi

Abstract

Thin film of Cu2ZnSnS4 (CZTS) is an alternative semiconductor used as light absorber layer on solar cell. CZTS can replace silicon that commonly used as commercial semiconductor. The advantage of using CZTS as absorber layer is due to the abundance of its chemical composer on earth, and its high value of absorption coefficient. The absorber layer was made by using electrodeposition method on ITO glass substrates. The films were deposited at room temperature using potentiostatic mode with a potential of –1.05 V for 30, 45, and 60 minutes. After that, the films were annealed at two different temperatures, 180 ºC and 500 °C, for 45 minutes in N2/H2S atmosphere. Based on X-ray diffraction analysis, the polycrystalline thin film obtained fall into kesterite crystal phase. This type of crystal was obtained when the CZTS was annealed at 500 °C in H2S/N2 atmosphere. The value of optical band gap energy for the CZTS thin film was 2.2 eV with the film thickness about 1.228–6.366 μm. The sample of CZTS with electrodeposition time of 45 minutes and annealing temperature of 500 °C showed the best result and in conformity with absorber layers criteria for solar cells.