Simulasi Perancangan Sel Surya Triple Junction Al0.3Ga0.7As / InP / Ge Menggunakan Program PC1D Dan Matlab

Abstract

Solar cells are one source of renewable energy that harnesses sunlight for generating electricity. Increasing the efficiency of solar cells can be done by preparing a multiple layer of semiconductors with different energy gap, commonly referred to as multijunctions solar cells. Simulations were carried out in two different models. Model 1 is a simulation that generate different valuer of currents in each layer. while Model 2 is a simulation that generate the same value currents in each layer. In Model 1, those three layers of Al0.3Ga0.7As / InP / Ge produce 26.2 mA, 16.2 mA, and 11.0 mA of ISC current respectively. The total efficiency for this model is 38.86 %. As for simulation of Model 2 Isc current value is fixed for each layer is 11.9 mA. The total efficiency of Model 2 is obtained around 20.26 %. All simulations is performed using Solar Irradiance of 1367 W/m2 obtained from the calculation of the blackbody radiation spectrum, at 6000 K.