Studi konduktivitas listrik film tipis Ba(0,25)Sr(0,75)TiO(3) yang didadah Ferium Oksida (BFST) menggunakan Metode Chemical Solution Deposition

Abstract

Has done growth Ba(0,25)Sr(0,75)TiO(3) (BST) thin film and BST are pure Ferium Oxide Fe(2)O(3) dopant (BFS1j with dopant variations 5%, 10% and 15% above the substrate Si (100) type-p using Chemical Solution Deposition Method (CSD) with the spin coating technique at a speed of arow1d 3000 rpm for 30 seconds. BST thin films made with I M concentration and annealing at a temperature of 850°C for Si Substrate. Thin film on silicon substrate type-p thickness characterization performed using the volumetric method and the characterization of electrical conductivity by using LCR meter. From the characterization results showed the thickness increases with the addition of ferium oxide dopant given. Electrical conductivity value of BST and BFST thin films are in the range semiconductor materials and electrical conductivity values obtained increased when the higher intensity light is used whereas resistance value could decrease if the light intensity is increased. The addition offerium oxide dopant will increases electrical conductivity value ofBST and BFST thin films.