Sintesis dan Uji Sifat Film Tipis Barium Titanat (BaTiO3) dengan Variasi Konsentrasi Iron (II) Asetat (Fe(CH3COO)2) sebagai Pendadah

Abstract

Sintesis film tipis BaTiO3 dengan variasi konsentrasi pendadah Fe (0%; 2%; 4%; dan 6%) menggunakan metode chemical solution deposition (CSD) berhasil dilakukan. Larutan sampel dideposisikan di atas substrat silikon (100) tipe-p dengan teknik spin coating pada kecepatan anguler 8000 rpm selama 60 detik. Proses annealing dimulai pada suhu kamar hingga mencapai suhu 850°C dan ditahan selama 8 jam dengan kelajuan suhu sebesar 1,67°C/menit, dilanjutkan dengan pendinginan hingga suhu kamar selama 12 jam. Ketebalan film dihitung dengan metode volumetrik dan hasilnya berturut-turut yaitu 3,9867 μm; 3,8759 μm; 3,6913 μm; dan 3,0454 μm. Analisis dengan persamaan Cramer-Cohen menghasilkan parameter kisi a = b yaitu 3,843 Å; 3,882 Å; 3,898 Å; dan 3,909 Å serta parameter kisi c yaitu 4,002 Å; 3,938 Å; 4,070 Å; dan 4,024 Å dengan struktur kristal tetragonal. Nilai enegi band gap hasil analisis dengan fungsi Kubelka Munk untuk indirect transition berada dalam rentang 3,0689 – 3,2051 eV dan direct transition berada dalam rentang 2,7660 – 3,0417 eV.

The synthesis of BaTiO3 thin film with variations in concentration of Fe as dopant (0%; 2%; 4%; and 6%) using chemical solution deposition (CSD) method has been successfully done. The solutions was deposited on p-type silicon (100) substrates with spin coating technique at the angular speed of 8000 rpm for 60 seconds. The annealing process was started at room temperature until 850°C and was held for 8 hours with a temperature speed of 1.67°C/minutes, followed by cooling process to room temperature for 12 hours. Film thickness was calculated using volumetric method and the results are 3.9867 μm; 3.8759 μm; 3.6913 μm; and 3.0454 μm. The results of the analysis using Cramer-Cohen equation obtained that the lattice parameters a = b are 3.843 Å; 3.882 Å; 3.898 Å; and 3.909 Å and c are 4.002 Å; 3.938 Å; 4.070 Å; and 4.024 Å with tetragonal crystal structure. The values of band gap energy that was analyzed using Kubelka-Munk method equation are in range of 3.0689 – 3.2051 eV for indirect transition and 2.7660 – 3.0417 eV for direct transition.