Simulasi Perancangan Sel Surya Triple Junction Al0.3Ga0.7As / InP / Ge Menggunakan Program PC1D Dan Matlab
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Date
2013Author
Sobirin, Robi
Sumaryada, Tony Ibnu
Syafutra, Heriyanto
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Solar cells are one source of renewable energy that harnesses sunlight for generating electricity. Increasing the efficiency of solar cells can be done by preparing a multiple layer of semiconductors with different energy gap, commonly referred to as multijunctions solar cells. Simulations were carried out in two different models. Model 1 is a simulation that generate different valuer of currents in each layer. while Model 2 is a simulation that generate the same value currents in each layer. In Model 1, those three layers of Al0.3Ga0.7As / InP / Ge produce 26.2 mA, 16.2 mA, and 11.0 mA of ISC current respectively. The total efficiency for this model is 38.86 %. As for simulation of Model 2 Isc current value is fixed for each layer is 11.9 mA. The total efficiency of Model 2 is obtained around 20.26 %. All simulations is performed using Solar Irradiance of 1367 W/m2 obtained from the calculation of the blackbody radiation spectrum, at 6000 K.
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- UT - Physics [1097]