View Item 
      •   IPB Repository
      • Dissertations and Theses
      • Undergraduate Theses
      • UT - Faculty of Mathematics and Natural Sciences
      • UT - Physics
      • View Item
      •   IPB Repository
      • Dissertations and Theses
      • Undergraduate Theses
      • UT - Faculty of Mathematics and Natural Sciences
      • UT - Physics
      • View Item
      JavaScript is disabled for your browser. Some features of this site may not work without it.

      Karakteristik Kelistrikan Film Tipis BaTiO3 Didadah Rutenium di atas Substrat Silikon Tipe-p

      Thumbnail
      View/Open
      Cover (639.6Kb)
      Fullteks (1.149Mb)
      Lampiran (357.7Kb)
      Date
      2023
      Author
      Liydia, Wulan Ananda
      Syafutra, Heriyanto
      Irzaman
      Metadata
      Show full item record
      Abstract
      Film tipis Barium Titanat (BaTiO3) telah berhasil dibuat dengan menggunakan metode Chemical Solution Deposition (CSD) dan Spin Coating. Dalam penelitian ini telah dibuat film BaTiO3 didadah Ru dengan variasi konsentrasi pendadah 0%, 0,5%, dan 1%. Film tipis tersebut dideposisikan di atas substrat silikon tipe-p (100). Film tipis BaTiO3 melalui tahap annealing pada suhu 850oC ditahan selama 8 jam dengan kelajuan kenaikan suhu sebesar 1,67oC/menit, kemudian mengalami proses pendinginan 12 jam. Film tipis BaTiO3 didadah Ru dikarakterisasi sifat listriknya dengan menggunakan I-V meter, dan Space Charge Limited Current (SCLC). Kurva I-V menunjukkan bahwa film tipis memiliki karakteristik dioda dan responsif terhadap perubahan intensitas radiasi cahaya. Peningkatan konsentrasi pendadah Ru menyebabkan nilai saturasi meningkat, sedangkan nilai potensial penghalang menurun. Penambahan konsentrasi pendadah Ru secara linear menyebabkan kenaikan nilai mobilitas muatan. BaTiO3 didadah Ru memiliki sifat kelistrikan dan responsif terhadap cahaya.
       
      Barium Titanate (BaTiO3) thin films have been successfully created using Chemical Solution Deposition (CSD) Method and Spin Coating. In this research, BaTiO3 films are doped with Ru with concentration variants of 0%, 0,5%, and 1%. Those thin films are deposited above a silicon substrate type-p (100). BaTiO3 films are through annealing process at 850°C and held for 8 hours with temperature rise rate of 1,67°C/minutes, then undergoes a cooling process for 12 hours. BaTiO3 doped with Ru were characterized by their electrical properties with I-V Meter, and Space Charge Limited Current (SCLC). The curve from I-V meter shows that thin films have diode characteristics and responsive to change in the intensity of light radiation. The increase of doped concentration of Ru causes the saturation value to also increase, meanwhile the potential value of the barrier decreases. The addition of doped concentration of Ru linearly causes the increase of load mobility. BaTiO3 doped with Ru has electrical properties and is responsive to light.
       
      URI
      http://repository.ipb.ac.id/handle/123456789/124808
      Collections
      • UT - Physics [1230]

      Copyright © 2020 Library of IPB University
      All rights reserved
      Contact Us | Send Feedback
      Indonesia DSpace Group 
      IPB University Scientific Repository
      UIN Syarif Hidayatullah Institutional Repository
      Universitas Jember Digital Repository
        

       

      Browse

      All of IPB RepositoryCollectionsBy Issue DateAuthorsTitlesSubjectsThis CollectionBy Issue DateAuthorsTitlesSubjects

      My Account

      Login

      Application

      google store

      Copyright © 2020 Library of IPB University
      All rights reserved
      Contact Us | Send Feedback
      Indonesia DSpace Group 
      IPB University Scientific Repository
      UIN Syarif Hidayatullah Institutional Repository
      Universitas Jember Digital Repository